Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells

► An enhanced minority carrier lifetime at extended defects in multicrystalline silicon is observed with the use of HF/HNO3 stain etching to texture the surface. ► FTIR analysis shows no influence of oxide passivation in this effect. ► SEM images show a preferential etching at extended defects suggesting smoothing at defects as one of the causes for the reduced recombination activity. ► LBIC images show a reduction in IQE at extended defects in HF/HNO3 textured multicrystalline solar cells.