III-Vs on Si for photonic applications-A monolithic approach

► Monolithic evanescently coupled silicon laser (MECSL) structure treated. ► Optical mode profiles and thermal resistivity of MECSL optimized by simulation. ► MECSL through epitaxial lateral overgrowth (ELOG) of InP on Si exemplified. ► Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. ► Growth of dislocation free thin InP layer on Si by ELOG for MECSL demonstrated.