The electromagnetic properties of the Mn doped Ge/Si quantum dots diodes

We present the electromagnetic properties of Mn doped Ge quantum dots (QDs)/Si electromagnetic diode. The Ge:Mn QDs were grown with a GeH4/Ar mixed gas under a constant flow at 500 °C by means of a plasma enhanced chemical vapor deposition (PECVD) process. They were then doped with different concentrations of Mn using a magnetron sputtering technique and annealed at 600 °C. The Ge:Mn QD samples show wildly open smooth hysteresis loops. The remnant magnetization Mr and saturation magnetic intensity Ms are functions of the doping concentration of Mn. The electromagnetic diodes fabricated in this way exhibit perfect electromagnetic, current–voltage (I–V) and capacitance–voltage (C–V) properties. The largest voltage and magnetic resistance differences with and without magnetic field are up to 4 V and 169 kΩ, respectively. These electromagnetic properties of the Ge1−xMnx QDs/Si diodes can be used to make various electromagnetic devices, including switches and storages devices.

The Ge:Mn QDs were grown with a GeH4/Ar mixed gas under a constant flow at 500 °C by means of a plasma enhanced chemical vapor deposition (PECVD) process. They were then doped with different concentrations of Mn using a magnetic sputtering technique and annealed at 600 °C. The Ge:Mn QD samples show large remanent magnetizations Mr and saturation magnetic intensities Ms. The electromagnetic diodes fabricated in this way exhibit perfect electromagnetic and I–V properties. The largest voltage and magnetic resistance differences with and without magnetic field are up to 4 V and 169 kΩ, respectively.Figure optionsDownload as PowerPoint slideHighlights
► We fabricated doped Ge:Mn quantum dots (QDs)/Si electromagnetic diode.
► Ge QDs were grown by PECVD then doped with Mn with different concentrations.
► The Ge:Mn QDs show wide opening smooth hysteresis loops.
► The largest voltage and magnetic resistance differences are up to 4 V and 169 kΩ, respectively.