کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1529294 995747 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering
چکیده انگلیسی

This study compares the erbium emission from different Si-rich silicon oxynitrides matrices fabricated by magnetron sputtering. The Er-doped layers were grown by two different sputtering configurations: (i) standard co-sputtering of three confocal targets (Er2O3, Si3N4 and SiO2) under Ar plasma, and (ii) reactive co-sputtering under Ar + N2 plasma of either three (Er2O3, pure Si and SiO2) or two targets (Er2O3 and pure Si). The last reactive configuration was found to offer the best Er3+ PL intensity at 1.5 μm. This highest PL intensity was found comparable to the corresponding emission from Er-doped silicon-rich silicon oxide.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 177, Issue 10, 5 June 2012, Pages 725–728
نویسندگان
, , , , , , , ,