کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1529321 995748 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites
چکیده انگلیسی

We have investigated the memory effect of the nanocomposites of functionalized carbon nanoshells (f-CNSs) mixed with poly(3,4-ethylenedioxythiophene) doped with polystyrenesulfonate (PEDOT:PSS) polymer. The f-CNSs were synthesized by the spray pyrolysis method and functionalized in situ with functional groups (OH, COOH, C–H, C–OH) with the aim of improving their compatibility in the aqueous dispersion of PEDOT:PSS. The current–voltage (I–V) sweep curves at room temperature for the Al/f-CNSs, for certain concentrations range, embedded in a PEDOT:PSS layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. The memory effect observed in the devices can be explained due to the existence of trapped charges in the f-CNSs/PEDOT:PSS layer. The carrier transport mechanisms for the memory devices is studied and discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 176, Issue 5, 25 March 2011, Pages 462–466
نویسندگان
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