کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1529646 | 995764 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Numerical simulation of amplification of space charge waves in n-InP films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Numerical simulation of amplification of space charge waves in n-InP films Numerical simulation of amplification of space charge waves in n-InP films](/preview/png/1529646.png)
چکیده انگلیسی
The non-linear interaction of space charge waves including the amplification in microwave and millimeter wave range in n-InP films, possessing the negative differential conductance phenomenon, is investigated theoretically. Both the amplified signal and the generation of harmonics of the input signal are demonstrated, which are due to non-linear effect of the negative differential resistance. It is possible to observe an amplification of the space charge waves in n-InP films of submicron thicknesses at essentially higher frequencies f <70 GHz, when compared with n-GaAs films f < 44 GHz. The increment observed in the gain is due to the larger dynamic range in n-InP than in n-GaAs films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 176, Issue 17, 25 October 2011, Pages 1368-1372
Journal: Materials Science and Engineering: B - Volume 176, Issue 17, 25 October 2011, Pages 1368-1372
نویسندگان
Abel GarcÃa-Barrientos, Vassil Palankovski,