کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1529647 995764 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of the effect of the deposition parameters on the structural, electric and optical characteristics of polymorphous silicon films prepared by low frequency PECVD
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Study of the effect of the deposition parameters on the structural, electric and optical characteristics of polymorphous silicon films prepared by low frequency PECVD
چکیده انگلیسی

In this work we present our results on the deposition and characterization of polymorphous silicon (pm-Si:H) films prepared by low frequency plasma enhanced chemical vapor deposition (LF-PECVD). We have studied the effect of the plasma deposition parameters (as the chamber pressure and gas flow rates of SiH4 and H2) on the structural, electric, and optical characteristics of the films.The temperature dependence of conductivity (σ(T)), activation energy (Ea), optical band gap (Eg) and deposition rate (Vd) were extracted for pm-Si:H films deposited at different pressure values and different gas flow rates. We observed that the chamber pressure is an important parameter that has a significant effect on the electric characteristics, and as well on the morphology of the pm-Si:H films (deduced from atomic force microscopy). It was found an optimal pressure range, in order to produce pm-Si:H films with high Ea and room temperature conductivity, σRT, which are key parameters for thermal detection applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 176, Issue 17, 25 October 2011, Pages 1373–1377
نویسندگان
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