Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics

High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 °C for Si devices and below 320 °C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.

► Studied effect of nanocrystalline diamond (NCD) deposition on device metallization.
► Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices.
► Temperatures below 290 °C for Si devices and 320 °C for HEMTs prevent metal damage.
► Development of novel NCD-based thermal management for power electronics feasible.