CdTe reflection anisotropy line shape fitting

In this paper, an empirical novel plane-wave time dependent ensemble is introduced to fit the RA, the reflectance (R) and the imaginary part of the dielectric function oscillation measured around the E1 and E1 + Δ1 transition region in II–VI semiconductors. By applying the new plane-wave time dependent ensemble to the measured spectrum for a (0 0 1) oriented CdTe undoped commercial wafer, crystallized in a zinc-blende structure, a very good agreement was found between the measured spectrum and the fitting. In addition to this, the reliability of the plane-wave time dependent ensemble was probed, by comparing the results with the calculated fitting in terms of a Fourier series and in terms of a six-order polynomial fit. Our analysis suggests, that the experimental oscillation in the line shape of the RA cannot be fitted with a Fourier series using harmonics multiples of the number which dominates the measured RA spectra in the argument of the plane-wave ensemble.