On the conduction mechanism of p-type GaSb bulk crystal

Bulk crystals of gallium antimonide were grown using the vertical Bridgman techniques. The phase formation was confirmed by XRD studies. From dc and ac conductivity measurements, the conduction mechanism was investigated. The mobility ratio and the effective mass ratio were calculated to be 1.56 and 3.36 respectively. The measurements reveal higher values of power factor than the published results for the same compound.