کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1530146 | 1511989 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structure analysis of Sb-doped BaSnO3
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Sb-doped BaSnO3 is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO3, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO3 due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO3 by Sb-doping, which supports the PYS results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 173, Issues 1–3, 15 October 2010, Pages 33–36
Journal: Materials Science and Engineering: B - Volume 173, Issues 1–3, 15 October 2010, Pages 33–36
نویسندگان
Daisuke Yamashita, Satoru Takefuji, Masato Tsubomoto, Tomoyuki Yamamoto,