کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1530146 1511989 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic structure analysis of Sb-doped BaSnO3
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Electronic structure analysis of Sb-doped BaSnO3
چکیده انگلیسی

Sb-doped BaSnO3 is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO3, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO3 due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO3 by Sb-doping, which supports the PYS results.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 173, Issues 1–3, 15 October 2010, Pages 33–36
نویسندگان
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