Effect of processing on microstructure of Si:Mn

Effect of processing of Si:Mn at up to 1270 K (HT) under enhanced hydrostatic pressure (HP, up to 1.1 GPa) for 1 h on its microstructure has been investigated by X-ray and SIMS methods. Si:Mn was prepared by implantation at 610 K of Mn+ ions (dose 1 × 1016 cm−2, energy 160 keV) into (0 0 1) oriented Czochralski (Cz-Si) or Floating zone (Fz-Si) silicon with interstitial oxygen concentration, co = 1.5 × 1017 cm−3 (Fz-Si) or 9 × 1017 cm−3 (Cz-Si). The defect structure of Si:Mn depends on co, HT and HP. The intensity of X-ray diffraction peaks originating from the ferromagnetic Mn4Si7 phase (with the lattice parameters a = 0.5525 nm and c = 1.7463 nm) increases with HT, up to 1070 K. Markedly shifted Mn atom concentration towards the surface is observed after processing of Si:Mn at ≥1000 K, especially under 105 Pa. Processing at 1270 K results in the decreased content of Mn4Si7; Mn diffusivity decreases with HP. Oxygen gettering within the implantation-disturbed area has been stated.