کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1530642 1511996 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Vacancies and E-centers in silicon as multi-symmetry defects
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Vacancies and E-centers in silicon as multi-symmetry defects
چکیده انگلیسی

In this paper, using first-principles calculations, we demonstrate that vacancies and E-centers (AsV, SbV) in silicon can co-exist in several metastable configurations with notably different relaxation patterns, which have very similar formation energies. Thus these vacancy-type defects can be considered as multi-symmetry defects in the sense that, at elevated temperatures, the probabilities to find vacancies in different stable configurations are comparable. From an experimental point of view, the co-existence of various symmetries can complicate the identification of the defect.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 159–160, 15 March 2009, Pages 107–111
نویسندگان
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