کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1530646 1511996 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Microscopic underpinnings of defect nucleation and growth in silicon crystal growth and wafer processing
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Microscopic underpinnings of defect nucleation and growth in silicon crystal growth and wafer processing
چکیده انگلیسی

Accurate quantitative modeling of point defect and impurity aggregation during silicon crystal growth and wafer annealing requires a detailed understanding of the underlying atomic scale mechanisms involved in defect formation, diffusion, and clustering. Examples are presented that demonstrate the utility of atomic scale studies for generating a complete picture of defect aggregation in crystalline silicon. In the first example, an approach for computing the thermodynamic properties of point defect clusters at high temperature is presented that accounts for cluster configurational entropy. In the second example, a lattice kinetic Monte Carlo model is applied to the direct simulation of vacancy clustering in the presence of oxygen atoms, which are known to act as reversible vacancy traps. The simulations are able to capture complex aggregate morphologies that have been observed experimentally, in particular the cloud-like distribution of small clusters around voids, and the double-void structures frequently observed in Czochralski crystal growth.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 159–160, 15 March 2009, Pages 128–133
نویسندگان
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