کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1530651 | 1511996 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon](/preview/png/1530651.png)
چکیده انگلیسی
The precipitation process of silicon carbide in heavily carbon doped silicon is not yet fully understood. High resolution transmission electron microscopy observations suggest that in a first step carbon atoms form CSi dumbbells on regular Si lattice sites which agglomerate into large clusters. In a second step, when the cluster size reaches a radius of a few nm, the high interfacial energy due to the SiC/Si lattice misfit of almost 20% is overcome and the precipitation occurs. By simulation, details of the precipitation process can be obtained on the atomic level. A recently proposed parametrization of a Tersoff-like bond order potential is used to model the system appropriately. Preliminary results gained by molecular dynamics simulations using this potential are presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 159â160, 15 March 2009, Pages 149-152
Journal: Materials Science and Engineering: B - Volumes 159â160, 15 March 2009, Pages 149-152
نویسندگان
F. Zirkelbach, J.K.N. Lindner, K. Nordlund, B. Stritzker,