کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1530671 | 1511996 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulation Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulation](/preview/png/1530671.png)
چکیده انگلیسی
Intrinsic gettering (IG) in germanium-doped Czochralski (Cz) silicon wafer has been investigated through a processing simulation of dynamic random access memory fabrication involved with rapid-thermal-anneal (RTA). Compared with that of conventional Cz silicon, both the good quality defect-free denuded zone (DZ) with a slightly narrower width and the gettering region with a slightly higher density of bulk micro-defects (BMDs) could be generated in germanium-doped Cz (GCz) silicon during the device fabrication. These phenomena were interpreted through the generation of denser oxygen precipitates in GCz silicon than Cz silicon, which were considered to be ascribed to the enhancement of precipitate nucleation by the germanium doping. It is therefore believed that the germanium doping could improve the IG capability for Cz silicon wafer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 159â160, 15 March 2009, Pages 235-238
Journal: Materials Science and Engineering: B - Volumes 159â160, 15 March 2009, Pages 235-238
نویسندگان
Jiahe Chen, Deren Yang, Xiangyang Ma, Duanlin Que,