کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1530678 1511996 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Interaction of metal impurities with extended defects in crystalline silicon and its implications for gettering techniques used in photovoltaics
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Interaction of metal impurities with extended defects in crystalline silicon and its implications for gettering techniques used in photovoltaics
چکیده انگلیسی

Multicrystalline silicon materials for photovoltaic applications inherently contain extended defects like grain boundaries, dislocations, microdefects and in some cases also second phase precipitates due to high concentrations of light elements (carbon, nitrogen or oxygen) and transition metal impurities. The latter are known to reduce the minority carrier lifetime and hence should be removed by gettering during solar cell processing. This paper discusses the influence of extended defects on the spatial distribution of copper- and nickel-related silicide precipitates for a model system containing a small angle grain boundary and in one part silicon oxide pecipitates partly associated with punched-out dislocations. Phosphorus-diffusion gettering under conditions of mostly precipitated metal impurities is discussed in terms of quantitative simulations. It is shown that two regimes can be distinguished where gettering kinetics are either limited by precipitate dissolution or phosphorus in-diffusion. Finally, binding of metal impurities to dislocations is considered and its effect on gettering kinetics is illustrated in terms of gettering simulations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 159–160, 15 March 2009, Pages 264–268
نویسندگان
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