Stress-mediated redistribution of Mn in annealed Si:Mn

Buried amorphous silicon (a-Si) is produced in Czochralski single crystalline silicon implanted at 340 K with Mn+ (Si:Mn, 55Mn+ doses, D = 2 × 1015 or 1.2 × 1016 cm−2, energy 160 keV). Stress-mediated redistribution of Mn and solid phase epitaxial re-growth (SPER) of a-Si at up to 1273 K (HT), also under hydrostatic Ar pressure up to 1.1 GPa (HP), have been investigated by SIMS, X-ray and related methods. As-implanted Si:Mn indicates magnetic ordering. SPER depends on Mn+ dosage, HT, HP an on processing time. Processing at 870–1000 K results in a minimum in the Mn concentration at ∼0.15 μm depth. At 1170 K and above, the diffusion of Mn to the surface increases with HP. Our results help in understanding the mechanisms of SPER and of origin of magnetic ordering in Mn:Si.