کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1530777 | 1511998 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Direct preparation of crystalline CuInS2 thin films by radiofrequency sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Crystalline chalcopyrite CuInS2 thin films were obtained by r.f. sputtering at room temperature using a crystalline CuInS2 target and without any subsequent toxic gas, chemical or heat treatment. A systematic study of phase formation by X-ray diffraction and Raman spectroscopy and of morphology by scanning electron microscopy and atomic force microscopy was performed as function of relevant sputtering parameters: argon pressure, r.f. power and time of deposition. XRD studies show that films are amorphous until a critical thickness is reached, where they transform into crystalline chalcopyrite films with preferential (1Â 1Â 2) orientation and average grain size of 25-100Â nm. At low deposition rates, smooth films were obtained, whereas at high deposition rates, films are covered with surface particles. Films were p-type conducting with bulk carrier density about 1018/cm3, determined by Hall effect measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 157, Issues 1â3, 15 February 2009, Pages 66-71
Journal: Materials Science and Engineering: B - Volume 157, Issues 1â3, 15 February 2009, Pages 66-71
نویسندگان
R. Cayzac, F. Boulc'h, M. Bendahan, P. Lauque, P. Knauth,