کد مقاله کد نشریه سال انتشار مقاله انگلیسی ترجمه فارسی نسخه تمام متن
1530995 1512008 2007 5 صفحه PDF سفارش دهید دانلود رایگان
عنوان انگلیسی مقاله ISI
La0.7Sr0.3MnO3 thin films on Bi4Ti3O12/CeO2/yttria-stabilised-zirconia buffered Si(0 0 1) substrates: Electrical, magnetic and 1/f noise properties
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موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
La0.7Sr0.3MnO3 thin films on Bi4Ti3O12/CeO2/yttria-stabilised-zirconia buffered Si(0 0 1) substrates: Electrical, magnetic and 1/f noise properties
چکیده انگلیسی

The remarkable electronic and magnetic properties of manganites have raised lot of interests for applications. Together with room temperature operation, depositing epitaxial films onto Si substrates is one of the main concerns for their future breakthrough. This paper presents the structural, magnetic and electrical properties of La0.7Sr0.3MnO3 (LSMO) thin films deposited on Bi4Ti3O12 (BTO)/CeO2/yttria-stabilised-zirconia (YSZ) buffered Si(0 0 1) substrates. A comprehensive X-ray diffraction study was performed in order to investigate the epitaxial quality. The temperature of maximum resistance and the Curie temperature was 390 and 350 K, respectively, for the 50 nm thick films. Preliminary low frequency noise measurements were performed. The normalized Hooge parameter was in the range 10−27 to 10−28 m3, which make these films already competitive for uncooled bolometer applications, even if the noise is about one or two orders of magnitude higher than what we typically measured in the best LSMO films deposited on (0 0 1) SrTiO3 substrates. LSMO films deposited on BTO/CeO2/YSZ buffered silicon substrates were of overall good quality and suitable for use in device fabrication.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 144, Issues 1–3, 25 November 2007, Pages 73–77
نویسندگان
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