کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1530996 | 1512008 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic phase separation and the CMR effect in Pr1âxCaxMnO3 films on (0Â 0Â 1) vicinal SrTiO3 substrates
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electronic phase separation and the CMR effect in Pr1âxCaxMnO3 films on (0Â 0Â 1) vicinal SrTiO3 substrates Electronic phase separation and the CMR effect in Pr1âxCaxMnO3 films on (0Â 0Â 1) vicinal SrTiO3 substrates](/preview/png/1530996.png)
چکیده انگلیسی
Our previous work showed that Pr1âxCaxMnO3 (x = 0.2-0.5) thin films reveal an electronic phase separation, in which the low-temperature phase is orbital- and charge-ordered of the Zener-polaron type [Ch. Jooss, T. Beetz, L. Wu, M. Beleggia, R. Klie, M. Schofield, Y. Zhu, S. Schramm, J. Hoffmann, submitted for publication]. Applying a magnetic field leads to a ferromagnetic and conducting phase, which gives rise to the colossal magneto resistance effect (CMR). In this article we show that the orbital- and charge-ordered state could be significantly modified by different kind of lattice defects. Quenched disorder, present after the film deposition, can suppress long-range ordering. In addition, extended defects like twin boundaries act as a nucleation center for ordered domains, i.e. the hysteretic properties depend on the density of these defects. Well-ordered artificial anti-phase boundaries (APB) can be introduced by an epitaxial growth on vicinal substrates, leading to anisotropic transport properties with respect to the orientation of the APB.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 144, Issues 1â3, 25 November 2007, Pages 78-82
Journal: Materials Science and Engineering: B - Volume 144, Issues 1â3, 25 November 2007, Pages 78-82
نویسندگان
P. Moschkau, S. Schramm, J. Hoffmann, J. Fladerer, Ch. Jooss, L. Wu, Y. Zhu,