کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531050 1512000 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High-resolution X-ray diffraction by end of range defects in self-amorphized Ge
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
High-resolution X-ray diffraction by end of range defects in self-amorphized Ge
چکیده انگلیسی

In this study we detected the positive perpendicular strain (ɛ⊥) due to end of range (EOR) defects formed in Ge amorphized with 300 keV, 2.5 × 1015 Ge/cm2 at liquid nitrogen temperature by means of high-resolution X-ray diffraction. We found that, after complete solid phase epitaxial recrystallization of the amorphous layer (about 1 h at 340 °C), only 2% of the original ɛ⊥ survives. This strain completely disappears after 270 min at 405 °C. On the other hand, after this more aggressive annealing, a thin negatively strained layer appears just below the surface. The whole set of data is discussed and compared with existing literature.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 154–155, 5 December 2008, Pages 64–67
نویسندگان
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