کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531093 | 1512000 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, the influence of biaxial strain-induced diffusion anisotropy on the evolution of extended defects in silicon has been analyzed. Point-defect diffusion anisotropy has been modeled and implemented within an atomistic kinetic Monte Carlo framework. The anneal of {3 1 1}-defects has been simulated for self-interstitial diffusion anisotropies varying within the plausible ranges. From these simulations, it is observed that diffusion anisotropy has a significant effect on the competition between defect ripening and dissolution. In particular, it is shown that the plot of {3 1 1} density versus {3 1 1} mean size could be used to check for the existence of self-interstitial diffusion anisotropy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 154–155, 5 December 2008, Pages 260–263
Journal: Materials Science and Engineering: B - Volumes 154–155, 5 December 2008, Pages 260–263
نویسندگان
P. Castrillo, R. Pinacho, M. Jaraiz, J.E. Rubio, J. Singer,