کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531129 1512006 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Synthesis and luminescence properties of erbium silicate thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Synthesis and luminescence properties of erbium silicate thin films
چکیده انگلیسی

We have studied the structure and the room temperature luminescence of erbium silicate thin films deposited by rf magnetron sputtering. Films deposited on silicon oxide layers are characterized by good structural properties and excellent stability. The optical properties of these films are strongly improved by rapid thermal annealing processes performed in the range of temperature 800–1250 °C. In fact through the reduction of the defect density of the material, a very efficient room temperature photoluminescence at 1535 nm is obtained. We have also investigated the influence of the annealing ambient, by finding that treatments in O2 atmosphere are significantly more efficient in improving the optical properties of the material with respect to processes in N2. Upconversion effects become effective only when erbium silicate is excited with high pump powers. The evidence that all Er atoms (about 1022 cm−3) in erbium silicate films are optically active suggests interesting perspectives for optoelectronic applications of this material.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 146, Issues 1–3, 15 January 2008, Pages 29–34
نویسندگان
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