کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531130 1512006 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Er-doped Al2O3 thin films deposited by high-vacuum chemical vapor deposition (HV-CVD)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Er-doped Al2O3 thin films deposited by high-vacuum chemical vapor deposition (HV-CVD)
چکیده انگلیسی

Erbium-doped amorphous aluminum oxide layers deposited on Si or oxidized silicon substrates are promising construction pieces for future monolytic integrated optoelectronics devices. In a novel high-vacuum chemical vapor deposition setup the alumina films are grown with high homogeneity on 4 in. wafers with well controlled growth rate, chemical composition, and high deposition rates of up to 20 nm/min. The HV-CVD applies thermal decomposition of aluminum-isopropoxide with or without additional oxygen as reactive partner gas. Arbitrarily chosen values for different parameters show that deposition works in a wide parameter range and that the chemical composition, the roughness, growth rate, and the resulting index of refraction and optical guiding properties need a systematic study of the working window of the process. Nevertheless optical guiding at 670 nm wavelength is demonstrated and addition of erbium tetramethyl-heptanedionate as erbium precursor results in co-deposition of erbium in the alumina layers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 146, Issues 1–3, 15 January 2008, Pages 35–40
نویسندگان
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