کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531147 1512006 2008 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Energy level diagram for lanthanide-doped lanthanum orthovanadate
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Energy level diagram for lanthanide-doped lanthanum orthovanadate
چکیده انگلیسی

Based on temperature dependent photoconductivity, excitation, and emission measurements we have established the absolute location of 4f energy levels of Pr3+, Eu2+ and Tb3+ doped in LaVO4. In combination with an empirical model describing a systematic and material independent variation of the 4f ground states of tri- and divalent lanthanides this information was used to predict the corresponding absolute energy level positions of all the other lanthanides in the same compound. The results of our work are presented in a complete energy level diagram for LaVO4:Ln (Ln = La, Ce, Pr, …, Lu).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 146, Issues 1–3, 15 January 2008, Pages 114–120
نویسندگان
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