کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531154 1512006 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ultraviolet luminescence of Gd-doped a-SiXCYOZ:H films fabricated by plasma chemical vapor deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Ultraviolet luminescence of Gd-doped a-SiXCYOZ:H films fabricated by plasma chemical vapor deposition
چکیده انگلیسی

Thin a-SiXCYOZ:H films doped with gadolinium were prepared by plasma chemical vapor co-deposition (13.56 MHz) using hexamethyldisiloxane as a precursor of light-guide matrix, and tris(2,2,6,6-tetramethyl-3-5-heptanedionato)gadolinium(III) as a source of Gd3+ luminescent centers. The chemical structure of the films was investigated by X-ray photoelectron spectroscopy (XPS). We also performed measurements of optical absorption and photoluminescence. The Gd3+ emission at 312 nm was observed. It was found that the crucial role in this photoluminescence was played by the a-SiXCYOZ:H matrix in which Gd ions are surrounded by oxygen–silicon units (Gd3+–O–Si). The excitation of Gd3+ ions consists in a non-radiative transfer of energy absorbed in the matrix (200–230 nm) to the ions by a thermally activated process.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 146, Issues 1–3, 15 January 2008, Pages 151–156
نویسندگان
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