| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 1531200 | 1512010 | 2007 | 5 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Orientation and magnetic properties of FePt and CoPt films grown on MgO(1 1 0) single-crystal substrate by electron-beam coevaporation
												
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																																												موضوعات مرتبط
												
													مهندسی و علوم پایه
													مهندسی مواد
													مواد الکترونیکی، نوری و مغناطیسی
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												We have studied the orientation and magnetic properties of FePt and CoPt films deposited by electron-beam co-evaporation on MgO(1 1 0) single-crystal substrates at substrate temperatures from 500 to 700 °C. We observed that long-range chemical ordering of the L10 structure occurred over the entire range of substrate temperatures in FePt films and at 600 °C and up in CoPt films. Growth of FePt and CoPt yielded epitaxial films with cube-on-cube orientation of the pseudo-cubic L10 lattice with respect to the cubic MgO. X-ray diffraction patterns and magnetization loops of the FePt and CoPt films revealed the existence of L10 domains with the tetragonal c axis inclined at 45° to the film plane, orientations (0 h h) and (h 0 h), as well as L10 domains with the tetragonal c axis in the plane of the film, orientation (h h 0). The FePt and CoPt films for which X-ray diffraction indicated tetragonal phase was present all exhibited hard magnetic properties with easy axis along the [0 0 1] substrate direction as well as large in-plane magnetocrystalline anisotropy.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 142, Issues 2â3, 25 September 2007, Pages 139-143
											Journal: Materials Science and Engineering: B - Volume 142, Issues 2â3, 25 September 2007, Pages 139-143
نویسندگان
												Minghui Yu, H. Ohguchi, A. Zambano, I. Takeuchi, J.P. Liu, D. Josell, L.A. Bendersky,