کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531318 | 995830 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis and characterization of vanadium oxide films by post-oxidation and reactive sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Synthesis and characterization of vanadium oxide films by post-oxidation and reactive sputtering Synthesis and characterization of vanadium oxide films by post-oxidation and reactive sputtering](/preview/png/1531318.png)
چکیده انگلیسی
Vanadium oxide films were fabricated by two techniques—reactive deposition in oxygen-containing plasma and metal vanadium vacuum deposition with subsequent oxidation in air. It has been shown that the latter process allows formation of the films having reduced phase transition temperature ∼50 °С. The proposed capacitor design of sensitive element excludes electrical contacts to vanadium oxide, so the element is less crytical to degradation and current noise effects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 141, Issue 3, 15 August 2007, Pages 108–114
Journal: Materials Science and Engineering: B - Volume 141, Issue 3, 15 August 2007, Pages 108–114
نویسندگان
A. Khodin, Hak-In Hwang, Sung-Min Hong, V. Zalessky, T. Leonova, M. Belov, E. Outkina,