کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531369 1512005 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of nanocrystalline Pbs/n-Si heterostructures for optoelectronic applications
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Investigation of nanocrystalline Pbs/n-Si heterostructures for optoelectronic applications
چکیده انگلیسی

The nano-crystalline PbS/n-Si heterostructure was studied using photocurrent spectra, I–V and C–V characteristics and admittance spectroscopy. The frequency dependent junction capacitance and conductance measurements show the presence of two contributions: first, a defect related mechanism which we attribute to a deep trap level with a large cross-section in nano-crystals with smaller sizes around 5 nm at the interface with Si and a second mechanism with an activation energy of about 250 meV, attributed to carrier transport in relatively large PbS grains of about 15 nm in size.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 147, Issues 2–3, 15 February 2008, Pages 284–288
نویسندگان
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