Boron-doped silicon nano-wires

The boron-doped silicon nano-wires (B-SiNWs) were fabricated by chemical vapor deposition (CVD) and Al2O3 template process at a low temperature (620 °C). It is found that the peaks in Raman scattering and photoluminescence spectra shift after boron-doping, indicating that the crystalline degree of B-SiNWs was slightly varied compared with un-doped SiNWs. Finally, the mechanism of B-doped SiNWs was discussed briefly.