Formation and characterization of room temperature ferromagnetic As-doped p-type (Zn0.93Mn0.07)O layer

The As-doped (Zn0.93Mn0.07)O layer, formed by As+ ion implantation and subsequent annealing at 900 °C for 30 s, showed a clear peak from (Ao,X) emission. The sample exhibited the positive charge polarity indicative of p-type conductivity in the rectification measurement. The hole concentration and the hole mobility were determined to be 2.6 × 1018 cm−3 and of 13.1 cm2 V−1 s−1, from Hall effect measurements, respectively. The sample showing the stable p-type conductivity revealed high-TC ferromagnetism persisting up to ∼320 K. At 300 K, the periodic magnetic domain was clearly observed along the in-plane direction but not dependent on the surface morphology. The observed room temperature ferromagnetism is expected to originate from the increase of hole-mediated exchange interactions.