کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531535 995837 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Synthesis of nanocrystalline GaN by the sol–gel method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Synthesis of nanocrystalline GaN by the sol–gel method
چکیده انگلیسی

Single-phase wurtzite GaN nanocrystals with an average diameter of 11 ± 3 nm were synthesized by the sol–gel technique from readily available Ga(NO3)3. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) confirmed they had a hexagonal structure and a narrow size distribution of the nanocrystals. X-ray powder diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) measurement showed that the GaN powder was of single-phase wurtzite structure with a considerable fraction of structural defects such as twin and stacking faults. The IR spectrum showed that only the Ga–N stretch is present at 600 cm−1. The EDX pattern of as-prepared product showed their ratio approximate to 1:1. Room temperature photoluminescence (PL) measurement exhibited the band-edge emission of GaN at about 390 nm and defect emission peak at 610 nm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 136, Issue 1, 15 January 2007, Pages 33–36
نویسندگان
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