کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531543 995837 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Direct synthesis of SiC nanowires by multiple reaction VS growth
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Direct synthesis of SiC nanowires by multiple reaction VS growth
چکیده انگلیسی

β-SiC nanowires were directly synthesized by heating single-crystal silicon wafer and graphite without metal catalysts. The diameter of SiC nanowires is in the range of 10–30 nm, and the length is up to a few millimeters. Two kinds of SiC nanowires, namely pure SiC nanowires and SiC/SiO2 composite nanowires, formed at higher temperature (the holding stage) and lower temperature (the cooling stage), respectively. A multiple-reaction model was proposed to explain the formation of SiC nanowires.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 136, Issue 1, 15 January 2007, Pages 72–77
نویسندگان
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