کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531624 | 995841 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of type-II MoS2 film by chemical bath deposition onto Si coated with electrolessly Ni
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Preparation of type-II MoS2 film by chemical bath deposition onto Si coated with electrolessly Ni Preparation of type-II MoS2 film by chemical bath deposition onto Si coated with electrolessly Ni](/preview/png/1531624.png)
چکیده انگلیسی
MoS2 films were prepared by chemical bath deposition using Ni interlayer, which was deposited electrolessly on Si substrates. The combined techniques of X-ray diffraction, field emission scanning electron microscope (FESEM), Raman spectroscopy and optical reflective spectra were used for characterization of MoS2 films at different conditions. Results indicated that the type-II MoS2 films oriented with their c axis perpendicular to the plane of Si substrates were obtained at annealing temperature greater than 800 °C. The effect of nickel on the orientation of 2H-MoS2 crystallites can be explained on the basis of binary Ni-S phase diagram. The thin films have a direct optical bandgap of 1.87 eV as a result of optical reflective spectra. This article offers an easy way to prepare type-II MoS2 film of better crystallite.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 138, Issue 3, 15 April 2007, Pages 259-262
Journal: Materials Science and Engineering: B - Volume 138, Issue 3, 15 April 2007, Pages 259-262
نویسندگان
Ronghui Wei, Haibin Yang, Kai Du, Wuyou Fu, Minghui Li, Qingjiang Yu, Lianxia Chang, Yi Zeng, Yongming Sui, Hongyang Zhu, Guangtian Zou,