Structural and dielectric properties of Sb2O3-doped (Ba0.992−xSrxY0.008)TiO3.004 ceramics

Sb2O3-doped (Ba0.992−xSrxY0.008)TiO3.004 dielectric ceramics were prepared by conventional solid state ceramic route. The structure was identified by X-ray diffraction method and SEM was also employed to observe the surface morphologies. The dielectric properties were investigated with variation of Sb2O3 doping content and Ba/Sr ratio. The studies indicate that the relative dielectric constant as well as dielectric loss initially increases with increasing Sb2O3 content and then decreases. Contrary to the variation of the standing voltage, the Curie temperature decreases with increasing Sb2O3 doping content and reducing Ba/Sr ratio. The specimens of (Ba0.952Sr0.04Y0.008)TiO3.004 doped with 1.6 wt% Sb2O3 exhibited attractive properties, including high relative dielectric constant (>3000), low dielectric loss (<15 × 10−3), low temperature coefficient of capacitor (<±17%) in the temperature range of −25 to +85 °C.