کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531650 | 1512016 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface etched with the laser energy of 300 mJ/cm2 was 1.55 times higher than that of a conventional LED, and the wall-plug efficiency was enhanced 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 136, Issues 2–3, 25 January 2007, Pages 182–186
Journal: Materials Science and Engineering: B - Volume 136, Issues 2–3, 25 January 2007, Pages 182–186
نویسندگان
Hung-Wen Huang, Chih-Chiang Kao, Jung-Tang Chu, Wei-Chih Wang, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang, Chang-Chin Yu, Shou-Yi Kuo,