کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1531666 | 995843 | 2006 | 4 صفحه PDF | دانلود رایگان |

In the present work we perform a systematic study of oxidation of very low energy nitrogen-implanted strained-silicon in terms of oxide growth, structural characterization of the implanted strained-silicon substrate and electrical properties of the ultra thin oxides as a function of the substrate strain level. Low energy (3 keV) nitrogen (N2+) implantation was performed in strained-Si/SiGe/Si substrates of various strain levels and oxidations were carried out for different times at 850 °C. It has been found that nitrogen implantation efficiently blocks silicon oxidation, independently of the strain level of the substrate. TEM analysis revealed the full absence of extended defects in the strained-silicon substrate after the thermal treatments. The grown oxides exhibit very good electrical properties in terms of interface trap densities and leakage currents.
Journal: Materials Science and Engineering: B - Volume 135, Issue 3, 15 December 2006, Pages 199–202