کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531720 995845 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Discovery of classes among deep level centers in gallium arsenide
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Discovery of classes among deep level centers in gallium arsenide
چکیده انگلیسی
By using thermal electron emission data from the literature in addition to own measured results for totally 40 data sets of deep level centers in GaAs, we demonstrate that they can be divided into two different classes. We find that all the centers of this population, except one, can be interpreted as following the Meyer-Neldel rule. Under this condition, the magnitude of the matrix element determining their capture cross section is the most probable partitioning mechanism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 138, Issue 1, 15 March 2007, Pages 12-15
نویسندگان
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