کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531800 | 1512017 | 2006 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nitrogen-doped Czochralski silicon treated in rapid thermal process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nitrogen is one of the most important elements in Czochralski (CZ) silicon used in ultra-large scale integrity circuits (ULSI). In last decades, nitrogen-doped Czochralski (NCZ) silicon, which has been widely applied in microelectronic industry, has attracted much attention. In this presentation, the behavior of NCZ silicon treated in rapid thermal process (RTP) has been reviewed. The influence of RTP on oxygen precipitation, bulk microdefects, denuded zone and nitrogen and oxygen complexes in NCZ silicon has been investigated. The interaction of nitrogen with oxygen and vacancies in CZ silicon during RTP is also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 134, Issues 2–3, 15 October 2006, Pages 193–201
Journal: Materials Science and Engineering: B - Volume 134, Issues 2–3, 15 October 2006, Pages 193–201
نویسندگان
Deren Yang, Ming Li, Can Cui, Xiangyang Ma, Duanlin Que,