Stress dependent structure of annealed nitrogen-doped Cz-Si

As evidenced by the HP-dependent PL spectra, the treatment of Si-N under HP at 1070-1400 K stimulates precipitation of oxygen interstitials (Oi) with generation of small oxygen-containing defects. The effect of HP on microstructure of nitrogen-containing Cz-Si is related to stress-induced activation of nitrogen to form nuclei for precipitation of Oi's.