کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1532019 | 1512021 | 2006 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impedance spectroscopy study of RuO2/SrTiO3 thin film capacitors prepared by radio-frequency magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Thin film capacitors of SrTiO3 with RuO2 top and bottom electrodes on Si substrates were prepared by radio-frequency magnetron sputtering at substrate temperatures 500 and 700 °C and at various oxygen partial pressures. The thickness of the dielectric layer was varied between 200 and 900 nm. The impedance spectra of these samples could be interpreted with an equivalent circuit comprising a resistance and two RC-parallel elements in series. The dielectric permittivity ɛr of the bulk grains, as extracted from the high-frequency semicircle in the Cole–Cole plot, was in the range 300–600. High oxygen contents lead to high values of ɛr but also increase the grain boundary resistance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 130, Issues 1–3, 15 June 2006, Pages 237–245
Journal: Materials Science and Engineering: B - Volume 130, Issues 1–3, 15 June 2006, Pages 237–245
نویسندگان
Y.K. Vayunandana Reddy, D. Mergel, W. Osswald,