Study on the Raman scattering measurements of Mn ion implanted GaN

We investigate the temperature dependent Raman spectra of Mn implanted (Ga,Mn)N samples with five Mn implantation doses. A small shoulder at 572.4 cm−1 on the high energy side of the main Raman peak E2H has been attributed to the Mn-related local vibrational mode (LVM). It is found that with the increase of Mn implantation dose the intensity ratio of LVM to that of the E2H(ILVM/IE2H) increases at first and tends to saturate at high implantation dose. In addition, at high temperature or after rapid thermal anneal treatment, the value of ILVM/IE2H decreases significantly, explaining the reason why it is difficult to observe Mn-related LVM reported in the literature.