کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1532061 | 1512024 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications](/preview/png/1532061.png)
چکیده انگلیسی
High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400Â nm, while that for fast visible photo-detecting is 17 with film thickness of 3400Â nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 127, Issues 2â3, 25 February 2006, Pages 251-254
Journal: Materials Science and Engineering: B - Volume 127, Issues 2â3, 25 February 2006, Pages 251-254
نویسندگان
Chun-Yu Lin, Yean-Kuen Fang, Shih-Fang Chen, Ping-Chang Lin, Chun-Sheng Lin, Tse-Heng Chou, Jenn Shyong Hwang, Kuang I. Lin,