کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1532152 995856 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of nitrogen-implanted TiO2 nanostructured films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Characterization of nitrogen-implanted TiO2 nanostructured films
چکیده انگلیسی

Nanostructured tanium dioxide (TiO2) films were implanted with N+ at 40 keV and ion dose range of 1016/cm2 to 4 × 1016/cm2, and annealed at temperatures between 673 and 973 K. From XRD and TEM analyses it was found that the anatase phase of TiO2 remained stable up to annealing temperature of 973 K. The samples showed narrower XRD peaks corresponding to larger mean-grain sizes comparing to the un-implanted TiO2 samples. The SIMS depth profile showed a peak of nitrogen concentration at about 60 nm beneath the film surface and this was confirmed using the SRIM-2003 program for simulating ion beam interactions with matter. The absorption spectra of the films as measured using spectrophotometer were found to shift toward longer wavelengths with the increase of ion dose.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 126, Issue 1, 15 January 2006, Pages 44–48
نویسندگان
, , , ,