کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1532478 | 1512161 | 2010 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ion beam doping of semiconductor nanowires
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This review summarizes recent studies on ion implantation doping of semiconductor nanowires and discusses both the advantages and disadvantages compared to other doping approaches in detail. Furthermore, we give a guideline in both handling samples and performing ion-beam doping experiments for the nanosized objects and address the special needs of semiconductor nanowires in comparison to their bulk counterparts. The confined geometry leads to an enhanced sputtering yield, but also to an enhanced dynamic annealing effect; thus, a different structural impact of the ions, which can be even used for an alignment of the nanowires. The removal of the implantation damage is a crucial prerequisite for successful activation of implanted atoms and can be achieved via adequate annealing techniques, which are described in this review. Finally, we will report on several successful experiments in order to modify the electrical and optical properties in a controlled manner of silicon and compound semiconductor nanowires.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: R: Reports - Volume 70, Issues 3â6, 22 November 2010, Pages 30-43
Journal: Materials Science and Engineering: R: Reports - Volume 70, Issues 3â6, 22 November 2010, Pages 30-43
نویسندگان
C. Ronning, C. Borschel, S. Geburt, R. Niepelt,