کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1532504 | 1512159 | 2011 | 34 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electromigration in submicron interconnect features of integrated circuits
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
The intention of this review paper is to present the most important aspects of theoretical and experimental EM investigations together with a brief history of the development of the main concepts and methods. We present an overview of EM models from their origins in classical materials science methods up to the most recent developments for submicron interconnect features, as well as the application of ab initio and first principle methods. The main findings of experimental studies, important for any model development and application, will also be presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: R: Reports - Volume 71, Issues 5â6, 4 February 2011, Pages 53-86
Journal: Materials Science and Engineering: R: Reports - Volume 71, Issues 5â6, 4 February 2011, Pages 53-86
نویسندگان
H. Ceric, S. Selberherr,