کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1532667 996199 2008 43 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Current transport models for nanoscale semiconductor devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Current transport models for nanoscale semiconductor devices
چکیده انگلیسی
Parallel to the search for new technological solutions for MOSFET scaling, the development of conceptually new devices and architectures is becoming increasingly important. New nanoelectronic structures, such as carbon nanotubes, nanowires, and even molecules, are considered to be prominent candidates for the post-CMOS era. At this small device size the geometrical spread of the carrier wave packet in transport direction can no longer be ignored. When the device size becomes shorter than the phase coherence length, the complete information about carrier dynamics inside the device including the phase of the wave function is needed and one has to resort to a full quantum-mechanical description including scattering. Transport in advanced nanodevices is determined by the interplay between coherent propagation and scattering. Numerical methods for dissipative quantum transport based on the non-equilibrium Green's function formalism, the Liouville/von-Neumann equation for the density matrix, and the kinetic equation for the Wigner function are attaining relevance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: R: Reports - Volume 58, Issue 6, 7 January 2008, Pages 228-270
نویسندگان
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