کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1549601 | 1513096 | 2015 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hydrogen passivation effect on the conversion efficiency of Si solar cells by low-energy proton implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Hydrogen passivation effect on the conversion efficiency of Si solar cells by low-energy proton implantation Hydrogen passivation effect on the conversion efficiency of Si solar cells by low-energy proton implantation](/preview/png/1549601.png)
چکیده انگلیسی
This work illustrates low energy hydrogen ion implantation of Si solar cells just before the co-firing process. The cells were hydrogen implanted on the SiNx layer in order to improve the surface passivation and prevent the surface damage by the ion implantation beam. To control the depth of hydrogenated layer, the incident angle of hydrogen ion beam was tilted about 7° from the ã0 0 1ã direction and was also twisted 22.5° from the ã1 1 0ã direction. The cell implanted with low implantation dose of 1013 H+/cm2 and energy of 4 keV showed highest efficiency of 18.02% due to the excellent surface passivation property, high photocurrent and minority carrier lifetime as compared to the reference and other implanted silicon solar cells.157
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 122, December 2015, Pages 486-496
Journal: Solar Energy - Volume 122, December 2015, Pages 486-496
نویسندگان
Bhaskar Parida, Gyoungho Lim, Jaeho Choi, Srikanta Palei, Keunjoo Kim,