Fabrication of Ni-doped TiO2 thin film photoelectrode for solar cells

• Ni-doped TiO2 thin films have been prepared by sol–gel dip coating method.
• Quantum dot sensitized cells fabricated with TiO2 and Ni-doped TiO2 were compared.
• Efficiency of CdS sensitized Ni-doped TiO2 exhibited 1.33% while 0.98% for TiO2.

TiO2 and Ni-doped TiO2 thin films have been prepared by sol–gel dip coating method. X-ray diffraction studies show that TiO2 and Ni-doped nanocrystalline TiO2 thin films are of anatase phase. The surface morphology of CdS quantum dot sensitized TiO2 thin film and CdS quantum dot sensitized Ni-doped TiO2 thin film were analysed by scanning electron microscopy. The absorption edge of TiO2 thin films shift towards longer wavelengths (i.e. red shifted) with Ni doping, which greatly enhances the light absorption of TiO2 in the visible region. The power conversion efficiency of CdS quantum dot sensitized Ni-doped TiO2 (CdS QDS-NT) based solar cell exhibited an efficiency of 1.33%, which is higher than that of CdS quantum dot sensitized TiO2 (CdS QDS-T) (0.98%) solar cells.

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